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BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS

Designed for Complementary Use with BD896A, BD898A and BD900A 70 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A
B C E
TO-220 PACKAGE (TOP VIEW)
1 2 3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25C case temperature (unless otherwise noted)
RATING BD895A Collector-base voltage (IE = 0) BD897A BD899A BD895A Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Operating free-air temperature range Operating junction temperature range Storage temperature range NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. BD897A BD899A VEBO IC IB Ptot Ptot TA Tj Tstg VCEO V CBO SYMBOL VALUE 45 60 80 45 60 80 5 8 0.3 70 2 -65 to +150 -65 to +150 -65 to +150 V A A W W C C C V V UNIT
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER V(BR)CEO Collector-emitter breakdown voltage Collector-emitter cut-off current IC = 100 mA VCE = 30 V VCE = 30 V VCE = 40 V VCB = 45 V VCB = 60 V ICBO Collector cut-off current VCB = 80 V VCB = 45 V VCB = 60 V VCB = 80 V IEBO hFE VCE(sat) VBE(on) VEC Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage VEB = VCE = IB = VCE = IE = 5V 3V 16 mA 3V 8A IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = 4 A IC = 4 A IC = 4 A IB = 0 TC = 100C TC = 100C TC = 100C (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) (see Notes 3 and 4) 750 2.8 2.5 3.5 V V V TEST CONDITIONS BD895A (see Note 3) BD897A BD899A BD895A BD897A BD899A BD895A BD897A BD899A BD895A BD897A BD899A MIN 45 60 80 0.5 0.5 0.5 0.2 0.2 0.2 2 2 2 2 mA mA mA V TYP MAX UNIT
ICEO
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.79 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = 3 A VBE(off) = -3.5 V IB(on) = 12 mA RL = 10
MIN IB(off) = -12 mA tp = 20 s, dc 2%
TYP 1 5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
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BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS130AD
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
2*0 tp = 300 s, duty cycle < 2% IB = I C / 100
TCS130AB
hFE - Typical DC Current Gain
TC = -40C TC = 25C TC = 100C 10000
1*5
1000
1*0
VCE = 3 V tp = 300 s, duty cycle < 2% 100 0*5 1*0 IC - Collector Current - A 10
TC = -40C TC = 25C TC = 100C 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS130AC
2*5
2*0
1*5
1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% 0*5 0*5 1*0 IC - Collector Current - A 10
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS SAFE OPERATING AREA
10
SAS130AE
IC - Collector Current - A
1*0
0*1
BD895A BD897A BD899A 0.01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS130AB
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
AUGUST 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
5

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